Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper dedicated the investigation of SEB mechanism in GaN device using femtosecond pulsed laser. In test, commercial p-GaN was triggered by focused laser beam with wavelength 620 nm, and irradiation-sensitive area identified. We observed that damage modes were consistent results heavy ion experiments. The vertical breakdown drain proposed as dominant SEB. also provide schematic representation leakage path formation electrical data obtained following laser-induced study provides an important reference consideration reliability application prospects.